Semelab Plc. Bipolar Transistors - BJT BDY25B

The BDY25B is an NPN silicon transistor designed for switching circuits and large-signal power amplifiers, housed in a TO-3 (TO-204AA) package with a thermal resistance from junction to case of 3.5 °C/W. It has a collector-emitter voltage rating of 140 V, a collector-base voltage of 200 V, and a continuous collector current of 6 A, with a total power dissipation of 50 W at 25 °C. The transistor supports a maximum junction temperature of 200 °C and features a transition frequency of 10 MHz. Base-emitter saturation voltage is 1.2 V at a collector current of 2.0 A and base current of 0.25 A, with a forward-current transfer ratio ranging from 30 to 90 under specified conditions. Turn-on and turn-off times are 0.5 µs and 2.0 µs, respectively, under pulse test conditions.