TT Electronics Mosfet Transistor, P Channel, 4 A, 100 V, 600 Mohm, -10 V, -4 V Rohs Compliant Tt Electronics/semelab 2N6845

The 2N6845 is a P-channel enhancement mode MOSFET designed for high voltage switching applications. It is housed in a hermetically sealed TO-39 metal package, measuring 8.64 mm in length and 4.06 mm in diameter. The device has a drain-source breakdown voltage of 100 V and a continuous drain current of -4.0 A at 25°C case temperature. Its on-resistance is 0.60 Ω at -10 V gate-source voltage and -2.6 A drain current. The gate threshold voltage ranges from -2 V to -4 V, and the power dissipation is 20 W at 25°C case temperature. Thermal resistance from junction to case is 6.25 °C/W, and the operating and storage temperature range is -55 °C to 150 °C. The part meets RoHS standards.