TT Electronics Mosfet, N, To-39; Channel Type Tt Electronics/semelab 2N6796

The 2N6796 is an N-channel enhancement mode MOSFET in a TO-39 package, designed for switching applications. It has a drain-source breakdown voltage of 100 V, a continuous drain current of 8 A, and a drain-source on-resistance of 0.18 Ω at 10 V gate-source voltage. The device dissipates 25 W at 25°C case temperature, with a thermal resistance junction-to-case of 5.0°C/W. The gate-source voltage rating is ±20 V, and the operating junction temperature ranges from -55°C to +150°C. The lead temperature during soldering must not exceed 300°C for 10 seconds at 1.6 mm from the case.