The 2N6661 is an N-channel enhancement mode power MOSFET designed for power switching applications, featuring a 90V drain-source voltage rating and a continuous drain current of 0.9A at 25°C case temperature. It is housed in a hermetic metal TO-39 package with dimensions of 8.51 mm in height and 6.10 mm base diameter, and pinout configurations of source, gate, and drain through the case. The device has a low gate threshold voltage range of 0.3V to 2.5V across temperature, an on-state resistance of 4.0Ω at 10V gate-source voltage, and an integral body diode with a forward voltage of 0.7V to 1.4V. Thermal resistance from junction to case is 25°C/W, and the operating temperature range extends from -55°C to +150°C.
Trans MOSFET N-CH 90V 0.9A 3-Pin TO-39 Product overview: 2N6661 from TT Electronics is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 90V, 0.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 90V, 0.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2N6661 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-2N6661 |
| Product Name | 90V 0.9A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
