The 2N6059 is a silicon multi-epitaxial NPN bipolar transistor designed for high-current switching and amplification applications. It is housed in a hermetic TO-3 (TO-204AA) metal package with dimensions of 26.67 mm in height, 12.70 mm in width, and 11.18 mm in depth. The device supports a continuous collector current of 12 A, a collector-emitter voltage of 100 V, and a total power dissipation of 150 W at 25°C, with a thermal resistance from junction to case of 1.00°C/W. The junction and storage temperature ranges are -55°C to +175°C. Forward-current transfer ratio (hFE) ranges from 150 to 18,000 depending on operating conditions.
Trans Darlington NPN 100V 12A 3-Pin(2+Tab) TO-3 Product overview: 2N6059 from TT Electronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 12A. Search-friendly keywords include transistor, BJT, switching, amplification, 100V, 12A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N6059 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N6059 |
| Product Name | 100V 12A Bipolar Transistor |
