The 2N5415 is a silicon planar PNP bipolar transistor designed for signal amplification and switching applications. It is housed in a hermetic ceramic surface-mounted package with dimensions of 5.59 mm × 1.40 mm × 1.02 mm and an LCC3 (MO-041BA) footprint. The device has a collector-base voltage rating of -200 V, a collector-emitter voltage of -200 V, and a continuous collector current of 1.0 A. It dissipates up to 1.0 W at 25°C ambient temperature with a thermal resistance of 150 °C/W. The junction temperature range extends to 175°C, and storage temperature ranges from -65°C to 200°C. DC current gain (hFE) ranges from 30 to 150 at IC = -50 mA and VCE = -10 V, with a transition frequency of 15 MHz. Output capacitance is 25 pF at VCB = -10 V.
Trans GP BJT PNP 200V 1A 1000mW 3-Pin TO-39 Product overview: 2N5415 from TT Electronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 1A, 1000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 200V, 1A, 1000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5415 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N5415 |
| Product Name | 200V 1A 1000mW Bipolar Transistor |
| IC(max) | 1000 milliamps |
