The 2N3879 is a silicon planar epitaxial NPN bipolar transistor designed for high current, high speed switching applications in a hermetic TO-66 metal package. It has a collector-emitter voltage rating of 75V and a continuous collector current of 7A. The device dissipates up to 30W at 25°C case temperature with a thermal resistance of 5.83°C/W. Junction temperature ranges from -65°C to +200°C. Forward current gain (hFE) ranges from 12 to 100 at IC=4A and VCE=2V, with collector-emitter saturation voltage of 1.2V at IC=4A and IB=0.4A. Turn-on and turn-off times are specified at 0.16 to 0.44µs and 0.6 to 1.22µs respectively under pulse conditions. The TO-66 package has three pins: base, emitter, and case-collector connection.
Trans GP BJT NPN 75V 7A 3-Pin(2+Tab) TO-66 Product overview: 2N3879 from TT Electronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 7A. Search-friendly keywords include transistor, BJT, switching, amplification, 75V, 7A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N3879 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N3879 |
| Product Name | 75V 7A Bipolar Transistor |
| IC(max) | 7000 milliamps |
