The 2N3700 is a silicon NPN bipolar transistor designed for signal amplification and switching applications, housed in a hermetic TO-18 metal package with dimensions of 5.84 mm height, 4.95 mm body diameter, and 2.54 mm lead spacing. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 1.0 A, and a total power dissipation of 0.5 W at 25°C ambient temperature. The thermal resistance from junction to ambient is 350 °C/W, and the junction temperature range is -65°C to +200°C. The transistor features a DC current gain (hFE) ranging from 15 to 300, depending on collector current, and a collector-emitter saturation voltage of up to 0.5 V at 500 mA collector current and 50 mA base current.
Trans GP BJT NPN 80V 1A 3-Pin TO-18 Product overview: 2N3700 from TT Electronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 1A. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N3700 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N3700 |
| Product Name | 80V 1A Bipolar Transistor |
| IC(max) | 1000 milliamps |
