The 2N3637 is a PNP silicon transistor for high-voltage switching and low-power amplification, housed in a hermetic TO-39 package measuring 8.51 mm tall with a 5.08 mm lead pitch. It has a collector-emitter voltage rating of -175 V, continuous collector current of -1.0 A, and power dissipation of 1.0 W at 25°C. Junction temperature ranges from -65°C to +200°C. Thermal resistance is 35°C/W from junction to case and 175°C/W to ambient. DC current gain (hFE) ranges from 50 to 300 at VCE = -10 V. Transition frequency is 100 MHz. Collector-emitter saturation voltage is -0.3 V to -0.6 V under specified conditions. Input and output capacitances are 75 pF and 10 pF. Turn-on and turn-off times are 400 ns and 600 ns. Pulse testing adheres to ≤ 300 µs width and ≤ 2% duty cycle.
Trans GP BJT PNP 175V 1A 1000mW 3-Pin TO-39 Product overview: 2N3637 from TT Electronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 175V, 1A, 1000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 175V, 1A, 1000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N3637 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N3637 |
| Product Name | 175V 1A 1000mW Bipolar Transistor |
| IC(max) | 1000 milliamps |
