The 2N2219A is a silicon NPN bipolar junction transistor designed for high-speed saturated switching applications in general electronic circuits. It is packaged in a TO-39 (TO-205AD) hermetic metal case with dimensions of 8.51 mm diameter and 12.70 mm height. The device has a collector-emitter voltage rating of 40 V, a continuous collector current of 0.8 A, and a total power dissipation of 800 mW at 25°C. The junction temperature range is -65°C to +175°C, with thermal resistance from junction to ambient of 187.5 °C/W. Switching performance includes a transition frequency of 300 MHz and a collector-emitter saturation voltage of up to 1.0 V at 500 mA collector current. Pinout is emitter (pin 1), base (pin 2), collector (pin 3).
Trans GP BJT NPN 40V 0.8A 800mW 3-Pin TO-39 Product overview: 2N2219A from TT Electronics is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 0.8A, 800mW. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 0.8A, 800mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N2219A can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 276-2N2219A |
| Product Name | 40V 0.8A 800mW Bipolar Transistor |
| IC(max) | 800 milliamps |
