Transphorm, Inc. Single FETs, MOSFETs TP65H070G4PS

The TP65H070G4PS is a 650V normally-off GaN FET in a TO-220 package with a source tab, designed for high-efficiency power conversion in applications such as AI datacenter power supplies, e-mobility charging, and UPS systems. It features a dynamic RDS(on)eff of 72 mΩ maximum at 25°C and 85 mΩ maximum at 150°C, with a gate threshold voltage of 3.3 V to 4.8 V and a typical gate charge of 9 nC. The device supports a continuous drain current of 29 A at 25°C and operates with a junction temperature range of -55°C to 150°C. It is RoHS compliant and halogen-free, with JEDEC qualification and compatibility with standard silicon drivers. The TO-220 package has a junction-to-case thermal resistance of 1°C/W and a junction-to-ambient thermal resistance of 62°C/W.