Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Arrays - ULN2803APG ULN2803APG

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 093768-ULN2803APG
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: 8 NPN Darlington
Family Name: ULN2803AP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 18-DIP
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.6V @ 500μA, 350mA
Typical Gain (hFE) (Min): 1000 @ 350mA, 2V
Maximum Power Dissipation: 1.47W
Alternative Parts (Cross-Reference): TBD62083APG;
Introduction Date: February 14, 2006
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Sufficient

TRANS 8NPN DARL 50V 0.5A 18DIP Product overview: ULN2803APG from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.5A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.5A, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-ULN2803APG can be used for catalog matching and distributor lookup.