The TW107Z65C is a silicon carbide N-channel MOSFET designed for switching voltage regulators, featuring a 650 V drain-source voltage rating, a typical on-resistance of 107 mΩ, and a built-in SiC Schottky barrier diode with a forward voltage of -1.35 V. It is packaged in a TO-247-4L(X) case with a weight of 6.55 g and operates with a gate-source drive voltage of 18 V on and 0 V off. The device meets RoHS compatibility standards and has a maximum channel temperature of 175 °C. Thermal resistance from channel to case is 1.950 °C/W.
G3 650V SIC-MOSFET TO-247-4L 10
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 264-TW107Z65C,S1F-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
