Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TW048Z65C,S1F

The TW048Z65C is a silicon carbide N-channel MOSFET with a 650 V drain-source voltage rating and a typcial on-resistance of 48 mΩ, designed for switching voltage regulators. It features a built-in SiC Schottky barrier diode with a forward voltage of -1.35 V and a gate threshold voltage range of 3.0 to 5.0 V. The device is housed in a TO-247-4L(X) package, weighs 6.55 g, and operates with a maximum channel temperature of 175 °C. It meets RoHS compatibility standards and is rated for a maximum drain current of 40 A at 25 °C and 132 W power dissipation. The gate-source drive voltage is recommended at 18 V on and 0 V off.