Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TW015Z65C,S1F

The TW015Z65C is a silicon carbide N-channel MOSFET designed for switching voltage regulators, featuring a built-in SiC Schottky barrier diode and a TO-247-4L package. It has a drain-source voltage rating of 650 V, a typical on-resistance of 15 mΩ at 18 V gate drive, and a gate threshold voltage range of 3.0 to 5.0 V. The device supports a maximum channel temperature of 175 °C, with a channel-to-case thermal resistance of 0.438 °C/W. It is rated for a continuous drain current of 100 A at 25 °C and pulsed current up to 360 A. The package weighs 6.55 g and complies with RoHS. The part is specified as enhancement mode and is not intended for use in safety-critical systems.