Toshiba Electronics (UK) Ltd Single Bipolar Transistors TTC009,F(J

Description
Bipolar (BJT) Transistor NPN 80V 3A 150MHz 2W Through Hole TO-220NIS
  • Single Bipolar Transistors - TTC009F(J-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - TTC009,F(J - 1114856-TTC009,F(J - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - TTC009,F(J - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Bipolar (BJT) Transistor NPN 80V 3A 150MHz 2W Through Hole TO-220NIS
Request a Quote Datasheet

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Single Bipolar Transistors - TTC009F(J-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
TTC009F(J-ND
Single Bipolar Transistors TTC009F(J-ND
Bipolar (BJT) Transistor NPN 80V 3A 150MHz 2W Through Hole TO-220NIS

Bipolar (BJT) Transistor NPN 80V 3A 150MHz 2W Through Hole TO-220NIS

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - TTC009,F(J - 1114856-TTC009,F(J - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - TTC009,F(J
1114856-TTC009,F(J
TRANSISTORS - Transistors (BJT) - Single - TTC009,F(J 1114856-TTC009,F(J
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1114856-TTC009,F(J Packaging: Bulk Mounting: Through Hole Frequency - Transition: 150MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220NIS Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 500mV @ 100mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 500mA, 5V Maximum Power Dissipation: 2W Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1114856-TTC009,F(J
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 150MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220NIS
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 500mV @ 100mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 500mA, 5V
Maximum Power Dissipation: 2W
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - TTC009,F(J - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
TTC009,F(J
Discrete Semiconductor Products - Transistors - Bipolar (BJT) TTC009,F(J
TRANS NPN 80V 3A TO220NIS

TRANS NPN 80V 3A TO220NIS

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Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number TTC009F(J-ND 1114856-TTC009,F(J TTC009,F(J
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - TTC009,F(J Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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