Toshiba Electronics (UK) Ltd 150V 9A MOSFET Transistor TPH5900CNH,L1Q

MOSFET N-CH 150V 9A 8SOP Product overview: TPH5900CNH,L1Q from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 150V, 9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TPH5900CNH,L1Q can be used for catalog matching and distributor lookup.

N-Channel 150V 9A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)

N-Channel 150V 9A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)

N-Channel 150V 9A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1111184-TPH5900CNH,L1Q
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP Advance (5x5)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 4V @ 200μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 600pF @ 75V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 59 mOhm @ 4.5A, 10V
Alternative Parts (Cross-Reference): FDS86242; STS5N15F4; TPH5900CNH; TPH5900CNH,L1Q;
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance