Toshiba Corporation 50V 3A 3000mW Bipolar Transistor TPCP8505(TE85L,F)

Description
Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R Product overview: TPCP8505(TE85L,F) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 3A, 3000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 3A, 3000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TPCP8505(TE85L,F ) can be used for catalog matching and distributor lookup.
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Description
Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R Product overview: TPCP8505(TE85L,F) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 3A, 3000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 3A, 3000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TPCP8505(TE85L,F ) can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The TPCP8505 is an NPN silicon bipolar transistor designed for high-speed switching applications such as DC-DC converters. It is packaged in an 8-pin PS package with dimensions of 8.5 mm by 6.5 mm. The device has a collector-emitter voltage rating of 50 V, a continuous collector current of 3.0 A, and a power dissipation of 3.0 W when mounted on an FR4 board with 645 mm² copper area. It features a DC current gain (hFE) of 400 to 1000 at IC = 0.3 A and a collector-emitter saturation voltage of 0.14 V max at IC = 1 A. Switching times include a fall time of 120 ns typ. The part meets RoHS environmental standards and is rated for a junction temperature up to 150°C. Storage temperature ranges from −55°C to 150°C.

Datasheet Summary
Powered by GS/AI

The TPCP8505 is an NPN silicon bipolar transistor designed for high-speed switching applications such as DC-DC converters. It is packaged in an 8-pin PS package with dimensions of 8.5 mm by 6.5 mm. The device has a collector-emitter voltage rating of 50 V, a continuous collector current of 3.0 A, and a power dissipation of 3.0 W when mounted on an FR4 board with 645 mm² copper area. It features a DC current gain (hFE) of 400 to 1000 at IC = 0.3 A and a collector-emitter saturation voltage of 0.14 V max at IC = 1 A. Switching times include a fall time of 120 ns typ. The part meets RoHS environmental standards and is rated for a junction temperature up to 150°C. Storage temperature ranges from −55°C to 150°C.

Suppliers

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Singapore, Singapore
50V 3A 3000mW Bipolar Transistor
276-TPCP8505(TE85L,F)
50V 3A 3000mW Bipolar Transistor 276-TPCP8505(TE85L,F)
Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R Product overview: TPCP8505(TE85L,F) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 3A, 3000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 3A, 3000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TPCP8505(TE85L,F ) can be used for catalog matching and distributor lookup.

Trans GP BJT NPN 50V 3A 3000mW 8-Pin PS T/R Product overview: TPCP8505(TE85L,F) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 3A, 3000mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 3A, 3000mW, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-TPCP8505(TE85L,F) can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Bipolar RF Transistors
Product Number 276-TPCP8505(TE85L,F)
Product Name 50V 3A 3000mW Bipolar Transistor
Package Type Tape and Reel
Packing Method Tape and Reel
IC(max) 3000 milliamps
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