Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8B01 TPCF8B01

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 097651-TPCF8B01
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Polarity: P-Channel
Power Dissipation (Max): 330mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: VS-8 (2.9x1.5)
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.7A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 200μA
Max Gate Charge: 6nC @ 5V
Max Input Capacitance: 470pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 110 mOhm @ 1.4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

MOSFET P-CH 20V 2.7A VS-8 Product overview: TPCF8B01 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.7A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPCF8B01 can be used for catalog matching and distributor lookup.