The TPCF8302 is a silicon P-channel MOSFET designed for portable and notebook PC power applications. It is packaged in a VS-8 package with dimensions of 2.9 mm × 2.9 mm × 0.75 mm. The device has a drain-source voltage rating of -20 V, a continuous drain current of -3.0 A, and a typical drain-source ON resistance of 44 mΩ at VGS = -4.5 V and ID = -1.5 A. The gate threshold voltage ranges from -0.5 V to -1.2 V. The part meets RoHS compatibility standards, as indicated by dot-marked labeling. Thermal resistance from channel to ambient is 92.6 °C/W for single-device operation on a FR-4 board. It is rated for a maximum channel temperature of 150 °C and a storage temperature range of -55 °C to 150 °C.
MOSFET 2P-CH 20V 3A VS-8 Product overview: TPCF8302 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-TPCF8302 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-TPCF8302 |
| Product Name | 20V 3A MOSFET Transistor |
| TJ | 150 C (302 F) |