Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8201 TPCF8201

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 097523-TPCF8201 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: VS-8 (2.9x1.5) Maximum Power Dissipation: 330mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 7.5nC @ 5V Max Input Capacitance: 590pF @ 10V Maximum Rds On at Id,Vgs: 49 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 097523-TPCF8201 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: VS-8 (2.9x1.5) Maximum Power Dissipation: 330mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 7.5nC @ 5V Max Input Capacitance: 590pF @ 10V Maximum Rds On at Id,Vgs: 49 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8201 - 097523-TPCF8201 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8201
097523-TPCF8201
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8201 097523-TPCF8201
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 097523-TPCF8201 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: VS-8 (2.9x1.5) Maximum Power Dissipation: 330mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 3A Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 7.5nC @ 5V Max Input Capacitance: 590pF @ 10V Maximum Rds On at Id,Vgs: 49 mOhm @ 1.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 097523-TPCF8201
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: VS-8 (2.9x1.5)
Maximum Power Dissipation: 330mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 1.2V @ 200μA
Max Gate Charge: 7.5nC @ 5V
Max Input Capacitance: 590pF @ 10V
Maximum Rds On at Id,Vgs: 49 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 097523-TPCF8201
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8201
Polarity N-Channel
V(BR)DSS 20 volts
PD 330 milliwatts
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