Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8201 TPCF8201

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 097523-TPCF8201
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: VS-8 (2.9x1.5)
Maximum Power Dissipation: 330mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3A
Gate-Source Threshold Voltage: 1.2V @ 200μA
Max Gate Charge: 7.5nC @ 5V
Max Input Capacitance: 590pF @ 10V
Maximum Rds On at Id,Vgs: 49 mOhm @ 1.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient

MOSFET 2N-CH 20V 3A VS-8 Product overview: TPCF8201 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 3A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPCF8201 can be used for catalog matching and distributor lookup.