Toshiba America Electronic Components, Inc. 12V 6A MOSFET Transistor TPCF8101

Description
MOSFET P-CH 12V 6A VS-8 Product overview: TPCF8101 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPCF8101 can be used for catalog matching and distributor lookup.
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Description
MOSFET P-CH 12V 6A VS-8 Product overview: TPCF8101 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPCF8101 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
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Singapore
12V 6A MOSFET Transistor
285-TPCF8101
12V 6A MOSFET Transistor 285-TPCF8101
MOSFET P-CH 12V 6A VS-8 Product overview: TPCF8101 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPCF8101 can be used for catalog matching and distributor lookup.

MOSFET P-CH 12V 6A VS-8 Product overview: TPCF8101 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPCF8101 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8101 - 097066-TPCF8101 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8101
097066-TPCF8101
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8101 097066-TPCF8101
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 097066-TPCF8101 Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Temperature Range - Operating: 150°C (TJ) Case / Package: VS-8 (2.9x1.5) Dimension: 8-SMD, Flat Lead Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 18nC @ 5V Max Input Capacitance: 1600pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 28 mOhm @ 3A, 4.5V Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 097066-TPCF8101
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Temperature Range - Operating: 150°C (TJ)
Case / Package: VS-8 (2.9x1.5)
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 200μA
Max Gate Charge: 18nC @ 5V
Max Input Capacitance: 1600pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 28 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-TPCF8101 097066-TPCF8101
Product Name 12V 6A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8101
Polarity P-Channel P-Channel; P-Channel
PD 700 milliwatts 700 milliwatts
TJ 150 C (302 F) 150 C (302 F)
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