Toshiba Corporation MOSFET TPCA8107-H(TE12LQM

Description
MOSFET MOSFET P-Ch 40V 7.5A Rdson=0.03Ohm
Description
MOSFET MOSFET P-Ch 40V 7.5A Rdson=0.03Ohm
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The TPCA8107-H is a silicon P-channel MOSFET designed for high-efficiency DC-DC converter and portable equipment applications. It features a small footprint SMD package measuring 5.0 × 6.0 mm with a height of 0.595 mm and weighs 0.069 g. The device has a drain-source voltage rating of -40 V, a continuous drain current of -7.5 A, and a typical drain-source ON-resistance of 24 mΩ at -10 V gate-source bias. It exhibits a low total gate charge of 9.7 nC and a gate threshold voltage range of -0.8 to -2.0 V. Thermal resistance from channel to case is 4.17 °C/W, and channel temperature is limited to 150 °C. The part meets RoHS environmental standards.

Datasheet Summary
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The TPCA8107-H is a silicon P-channel MOSFET designed for high-efficiency DC-DC converter and portable equipment applications. It features a small footprint SMD package measuring 5.0 × 6.0 mm with a height of 0.595 mm and weighs 0.069 g. The device has a drain-source voltage rating of -40 V, a continuous drain current of -7.5 A, and a typical drain-source ON-resistance of 24 mΩ at -10 V gate-source bias. It exhibits a low total gate charge of 9.7 nC and a gate threshold voltage range of -0.8 to -2.0 V. Thermal resistance from channel to case is 4.17 °C/W, and channel temperature is limited to 150 °C. The part meets RoHS environmental standards.

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MOSFET MOSFET P-Ch 40V 7.5A Rdson=0.03Ohm

MOSFET MOSFET P-Ch 40V 7.5A Rdson=0.03Ohm

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number TPCA8107-H(TE12LQM
Product Name MOSFET
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