Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8062-H,LQ(CM TPCA8062-H,LQ(CM

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1111122-TPCA8062-H,L Q(CM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Advance (5x5) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 28A (Ta) Gate-Source Threshold Voltage: 2.3V @ 300μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 2900pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): RMW180N03TB; TPCA8A01-H; TPCA8A01-H(TE12L,Q; TPCA8062-H,LQ(CM; Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8062-H,LQ(CM - 1111122-TPCA8062-H,LQ(CM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - TPCA8062-HLQ(CM-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TPCA8062-H,LQ(CM - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1111122-TPCA8062-H,L Q(CM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Advance (5x5) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 28A (Ta) Gate-Source Threshold Voltage: 2.3V @ 300μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 2900pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): RMW180N03TB; TPCA8A01-H; TPCA8A01-H(TE12L,Q; TPCA8062-H,LQ(CM; Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8062-H,LQ(CM - 1111122-TPCA8062-H,LQ(CM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8062-H,LQ(CM
1111122-TPCA8062-H,LQ(CM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8062-H,LQ(CM 1111122-TPCA8062-H,LQ(CM
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1111122-TPCA8062-H,L Q(CM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta), 42W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Advance (5x5) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 28A (Ta) Gate-Source Threshold Voltage: 2.3V @ 300μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 2900pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.6 mOhm @ 14A, 10V Alternative Parts (Cross-Reference): RMW180N03TB; TPCA8A01-H; TPCA8A01-H(TE12L,Q; TPCA8062-H,LQ(CM; Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1111122-TPCA8062-H,LQ(CM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta), 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP Advance (5x5)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 28A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 300μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 2900pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.6 mOhm @ 14A, 10V
Alternative Parts (Cross-Reference): RMW180N03TB; TPCA8A01-H; TPCA8A01-H(TE12L,Q; TPCA8062-H,LQ(CM;
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - TPCA8062-HLQ(CM-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TPCA8062-HLQ(CM-ND
Single FETs, MOSFETs TPCA8062-HLQ(CM-ND
N-Channel 30V 28A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)

N-Channel 30V 28A (Ta) 1.6W (Ta), 42W (Tc) Surface Mount 8-SOP Advance (5x5)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TPCA8062-H,LQ(CM - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TPCA8062-H,LQ(CM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TPCA8062-H,LQ(CM
MOSFET N-CH 30V 28A 8SOP

MOSFET N-CH 30V 28A 8SOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1111122-TPCA8062-H,LQ(CM TPCA8062-HLQ(CM-ND TPCA8062-H,LQ(CM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8062-H,LQ(CM Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 1600 to 42000 milliwatts
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