Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8010-H TPCA8010-H

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 129021-TPCA8010-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Advance (5x5) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.5A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 600pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 129021-TPCA8010-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Advance (5x5) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.5A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 600pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8010-H - 129021-TPCA8010-H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8010-H
129021-TPCA8010-H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8010-H 129021-TPCA8010-H
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 129021-TPCA8010-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.6W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Advance (5x5) Dimension: 8-PowerVDFN Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 5.5A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 600pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 450 mOhm @ 2.7A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 129021-TPCA8010-H
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.6W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP Advance (5x5)
Dimension: 8-PowerVDFN
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 5.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 600pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 450 mOhm @ 2.7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 129021-TPCA8010-H
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCA8010-H
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 1600 to 45000 milliwatts
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