Toshiba Corporation MOSFET TPCA8006-H(TE12LQM

Description
MOSFET MOSFET N-Ch 100V 18A Rdson=0.067Ohm
Description
MOSFET MOSFET N-Ch 100V 18A Rdson=0.067Ohm
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The TPCA8006-H is a silicon N-channel MOSFET designed for switching regulator, motor drive, and DC/DC converter applications. It features a small and thin package with dimensions of 5.0 × 6.0 × 1.0 mm and weighs 0.069 g. The device has a continuous drain current rating of 18 A and a drain-source breakdown voltage of 100 V. Its typical drain-source ON-resistance is 41 mΩ at VGS = 10 V and ID = 9 A. Peak pulse drain current capability is 36 A, and it supports 224 mJ single-pulse avalanche energy. The gate threshold voltage ranges from 3.0 to 5.0 V, and the maximum channel temperature is 150°C. Thermal resistance from channel to case is 2.78 °C/W. The device meets IEC 60286-3 and RoHS standards for environmental compliance.

Datasheet Summary
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The TPCA8006-H is a silicon N-channel MOSFET designed for switching regulator, motor drive, and DC/DC converter applications. It features a small and thin package with dimensions of 5.0 × 6.0 × 1.0 mm and weighs 0.069 g. The device has a continuous drain current rating of 18 A and a drain-source breakdown voltage of 100 V. Its typical drain-source ON-resistance is 41 mΩ at VGS = 10 V and ID = 9 A. Peak pulse drain current capability is 36 A, and it supports 224 mJ single-pulse avalanche energy. The gate threshold voltage ranges from 3.0 to 5.0 V, and the maximum channel temperature is 150°C. Thermal resistance from channel to case is 2.78 °C/W. The device meets IEC 60286-3 and RoHS standards for environmental compliance.

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MOSFET MOSFET N-Ch 100V 18A Rdson=0.067Ohm

MOSFET MOSFET N-Ch 100V 18A Rdson=0.067Ohm

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number TPCA8006-H(TE12LQM
Product Name MOSFET
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