Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8A06-H TPC8A06-H

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056813-TPC8A06-H
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Schottky Diode (Body)
Polarity: N-Channel
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Case / Package: 8-SOP (5.5x6.0)
Dimension: 8-SOIC (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 1mA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 1800pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10.1 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

MOSFET N-CH 30V 12A 8SOP Product overview: TPC8A06-H from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 12A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPC8A06-H can be used for catalog matching and distributor lookup.