Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8A05-H TPC8A05-H

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056809-TPC8A05-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET FET Feature: Schottky Diode (Body) Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 2.3V @ 1mA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 1700pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.3 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient