Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8213-H TPC8213-H

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056440-TPC8213-H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP (5.5x6.0)
Maximum Power Dissipation: 450mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5A
Gate-Source Threshold Voltage: 2.3V @ 1mA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 625pF @ 10V
Maximum Rds On at Id,Vgs: 50 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 60V 5A SOP8 Product overview: TPC8213-H from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPC8213-H can be used for catalog matching and distributor lookup.