Toshiba America Electronic Components, Inc. 60V 5A MOSFET Transistor TPC8213-H

Description
MOSFET 2N-CH 60V 5A SOP8 Product overview: TPC8213-H from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPC8213-H can be used for catalog matching and distributor lookup.
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Description
MOSFET 2N-CH 60V 5A SOP8 Product overview: TPC8213-H from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPC8213-H can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
60V 5A MOSFET Transistor
285-TPC8213-H
60V 5A MOSFET Transistor 285-TPC8213-H
MOSFET 2N-CH 60V 5A SOP8 Product overview: TPC8213-H from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPC8213-H can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 60V 5A SOP8 Product overview: TPC8213-H from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPC8213-H can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8213-H - 056440-TPC8213-H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8213-H
056440-TPC8213-H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8213-H 056440-TPC8213-H
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056440-TPC8213-H Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Maximum Power Dissipation: 450mW Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5A Gate-Source Threshold Voltage: 2.3V @ 1mA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 625pF @ 10V Maximum Rds On at Id,Vgs: 50 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056440-TPC8213-H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP (5.5x6.0)
Maximum Power Dissipation: 450mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5A
Gate-Source Threshold Voltage: 2.3V @ 1mA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 625pF @ 10V
Maximum Rds On at Id,Vgs: 50 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Transistor - 124012315 - Radwell International
Willingboro, NJ, United States
Transistor
124012315
Transistor 124012315
DISCONTINUED BY MANUFACTURER, TRANSISTOR, MOSFET, N CHANNEL, 2 CHANNELS, 60 V, 5A, 8-SOP. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, TRANSISTOR, MOSFET, N CHANNEL, 2 CHANNELS, 60 V, 5A, 8-SOP. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 285-TPC8213-H 056440-TPC8213-H 124012315
Product Name 60V 5A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8213-H Transistor
PD 450 milliwatts 450 milliwatts
TJ 150 C (302 F) 150 C (302 F)
Package Type Reel - TR SOT3; 8-SOP (5.5x6.0)
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