Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8207(TE12L) TPC8207(TE12L)

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 096845-TPC8207(TE12L ) Packaging: Digi-Reel Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Maximum Power Dissipation: 450mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 22nC @ 5V Max Input Capacitance: 2010pF @ 10V Maximum Rds On at Id,Vgs: 20 mOhm @ 4.8A, 4V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 096845-TPC8207(TE12L ) Packaging: Digi-Reel Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Maximum Power Dissipation: 450mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 22nC @ 5V Max Input Capacitance: 2010pF @ 10V Maximum Rds On at Id,Vgs: 20 mOhm @ 4.8A, 4V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8207(TE12L) - 096845-TPC8207(TE12L) - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8207(TE12L)
096845-TPC8207(TE12L)
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8207(TE12L) 096845-TPC8207(TE12L)
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 096845-TPC8207(TE12L ) Packaging: Digi-Reel Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Maximum Power Dissipation: 450mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 22nC @ 5V Max Input Capacitance: 2010pF @ 10V Maximum Rds On at Id,Vgs: 20 mOhm @ 4.8A, 4V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 096845-TPC8207(TE12L)
Packaging: Digi-Reel
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP (5.5x6.0)
Maximum Power Dissipation: 450mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A
Gate-Source Threshold Voltage: 1.2V @ 200μA
Max Gate Charge: 22nC @ 5V
Max Input Capacitance: 2010pF @ 10V
Maximum Rds On at Id,Vgs: 20 mOhm @ 4.8A, 4V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
FET, MOSFET Arrays - TPC8207DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
TPC8207DKR-ND
FET, MOSFET Arrays TPC8207DKR-ND
Mosfet Array 2 N-Channel (Dual) 20V 6A 750mW Surface Mount 8-SOP (5.5x6.0)

Mosfet Array 2 N-Channel (Dual) 20V 6A 750mW Surface Mount 8-SOP (5.5x6.0)

Buy Now Datasheet
Singapore
20V 6A MOSFET Transistor
289-TPC8207(TE12L)
20V 6A MOSFET Transistor 289-TPC8207(TE12L)
MOSFET 2N-CH 20V 6A 8-SOP Product overview: TPC8207(TE12L) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-TPC8207(TE12L) can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 20V 6A 8-SOP Product overview: TPC8207(TE12L) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-TPC8207(TE12L) can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TPC8207(TE12L) - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TPC8207(TE12L)
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TPC8207(TE12L)
MOSFET 2N-CH 20V 6A 8-SOP

MOSFET 2N-CH 20V 6A 8-SOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 096845-TPC8207(TE12L) TPC8207DKR-ND 289-TPC8207(TE12L) TPC8207(TE12L)
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8207(TE12L) FET, MOSFET Arrays 20V 6A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
V(BR)DSS 20 volts
PD 450 milliwatts
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