Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8133LQ TPC8133LQ

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 213273-TPC8133LQ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2V @ 500μA
Max Gate Charge: 64nC @ 10V
Max Input Capacitance: 2900pF @ 10V
Maximum Gate-Source Voltage: +20V, -25V
Maximum Rds On at Id,Vgs: 15 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

MOSFET P-CH 40V 9A 8SOP Product overview: TPC8133LQ from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPC8133LQ can be used for catalog matching and distributor lookup.