Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8109 TPC8109

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 219783-TPC8109
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP (5.5x6.0)
Dimension: 8-SOIC (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2260pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

MOSFET P-CH 30V 10A 8-SOP Product overview: TPC8109 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPC8109 can be used for catalog matching and distributor lookup.