Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TPC8109(TE12L)

Description
P-Channel 30V 10A (Ta) Surface Mount 8-SOP (5.5x6.0)
Request a Quote Datasheet
Description
P-Channel 30V 10A (Ta) Surface Mount 8-SOP (5.5x6.0)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TPC8109CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TPC8109CT-ND
Single FETs, MOSFETs TPC8109CT-ND
P-Channel 30V 10A (Ta) Surface Mount 8-SOP (5.5x6.0)

P-Channel 30V 10A (Ta) Surface Mount 8-SOP (5.5x6.0)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8109(TE12L) - 103712-TPC8109(TE12L) - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8109(TE12L)
103712-TPC8109(TE12L)
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8109(TE12L) 103712-TPC8109(TE12L)
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 103712-TPC8109(TE12L ) Packaging: Cut Reel Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 10A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 45nC @ 10V Max Input Capacitance: 2260pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 103712-TPC8109(TE12L)
Packaging: Cut Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP (5.5x6.0)
Dimension: 8-SOIC (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 10A (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 45nC @ 10V
Max Input Capacitance: 2260pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
30V 10A MOSFET Transistor
278-TPC8109(TE12L)
30V 10A MOSFET Transistor 278-TPC8109(TE12L)
MOSFET P-CH 30V 10A 8-SOP Product overview: TPC8109(TE12L) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TPC8109(TE12L) can be used for catalog matching and distributor lookup.

MOSFET P-CH 30V 10A 8-SOP Product overview: TPC8109(TE12L) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TPC8109(TE12L) can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET P-CH 30V 10A 8-SOP - 4669-TPC8109(TE12L) - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 30V 10A 8-SOP
4669-TPC8109(TE12L)
MOSFET P-CH 30V 10A 8-SOP 4669-TPC8109(TE12L)
MOSFET P-CH 30V 10A 8-SOP

MOSFET P-CH 30V 10A 8-SOP

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TPC8109(TE12L) - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TPC8109(TE12L)
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TPC8109(TE12L)
MOSFET P-CH 30V 10A 8-SOP

MOSFET P-CH 30V 10A 8-SOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number TPC8109CT-ND 103712-TPC8109(TE12L) 278-TPC8109(TE12L) 4669-TPC8109(TE12L) TPC8109(TE12L)
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8109(TE12L) 30V 10A MOSFET Transistor MOSFET P-CH 30V 10A 8-SOP Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.173"", 4.40mm Width)" SOT3; 8-SOP (5.5x6.0) Cut Tape (CT) 8-SOIC (0.173, 4.40mm Width)
V(BR)DSS 30 volts
PD 1000 milliwatts 1900 milliwatts
Unlock Full Specs
to access all available technical data