Toshiba America Electronic Components, Inc. Discrete Semiconductor Products TPC8108(TE12L,Q)

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 219782-TPC8108(TE12L ,Q) Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Packaging: Reel Mounting Style: SMD/SMT Operating Temperature Range: 150°C (TJ) Package: 8-SOIC (0.173", 4.40mm Width) Manufacturer Device Package: 8-SOP (5.5x6.0) FET Type: MOSFET P-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) @ Vds: 2260pF @ 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 219782-TPC8108(TE12L ,Q) Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Packaging: Reel Mounting Style: SMD/SMT Operating Temperature Range: 150°C (TJ) Package: 8-SOIC (0.173", 4.40mm Width) Manufacturer Device Package: 8-SOP (5.5x6.0) FET Type: MOSFET P-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) @ Vds: 2260pF @ 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance
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Discrete Semiconductor Products - 219782-TPC8108(TE12L,Q) - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
219782-TPC8108(TE12L,Q)
Discrete Semiconductor Products 219782-TPC8108(TE12L,Q)
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 219782-TPC8108(TE12L ,Q) Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Packaging: Reel Mounting Style: SMD/SMT Operating Temperature Range: 150°C (TJ) Package: 8-SOIC (0.173", 4.40mm Width) Manufacturer Device Package: 8-SOP (5.5x6.0) FET Type: MOSFET P-Channel, Metal Oxide FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 45nC @ 10V Input Capacitance (Ciss) @ Vds: 2260pF @ 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 219782-TPC8108(TE12L,Q)
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Packaging: Reel
Mounting Style: SMD/SMT
Operating Temperature Range: 150°C (TJ)
Package: 8-SOIC (0.173", 4.40mm Width)
Manufacturer Device Package: 8-SOP (5.5x6.0)
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) @ Vgs: 45nC @ 10V
Input Capacitance (Ciss) @ Vds: 2260pF @ 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Uncategorized Products
Product Number 219782-TPC8108(TE12L,Q)
Product Name Discrete Semiconductor Products
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