Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8051-H(TE12L,VM TPC8051-H(TE12L,VM

Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1100762-TPC8051-H(TE 12L,VM Mounting: SMD (SMT) Number of Elements: 1 Power Dissipation: 1.9 W Number of Pins: 6 Rise Time: 3.4 ns Fall Time: 6.7 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOP Popularity: Low Fake Threat In the Open Market: 74 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Continuous Drain Current (ID): 13 A Gate to Source Voltage (Vgs): 20 V
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Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1100762-TPC8051-H(TE 12L,VM Mounting: SMD (SMT) Number of Elements: 1 Power Dissipation: 1.9 W Number of Pins: 6 Rise Time: 3.4 ns Fall Time: 6.7 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOP Popularity: Low Fake Threat In the Open Market: 74 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Continuous Drain Current (ID): 13 A Gate to Source Voltage (Vgs): 20 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8051-H(TE12L,VM - 1100762-TPC8051-H(TE12L,VM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8051-H(TE12L,VM
1100762-TPC8051-H(TE12L,VM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8051-H(TE12L,VM 1100762-TPC8051-H(TE12L,VM
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1100762-TPC8051-H(TE 12L,VM Mounting: SMD (SMT) Number of Elements: 1 Power Dissipation: 1.9 W Number of Pins: 6 Rise Time: 3.4 ns Fall Time: 6.7 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOP Popularity: Low Fake Threat In the Open Market: 74 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Mount: Surface Mount RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Continuous Drain Current (ID): 13 A Gate to Source Voltage (Vgs): 20 V

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1100762-TPC8051-H(TE12L,VM
Mounting: SMD (SMT)
Number of Elements: 1
Power Dissipation: 1.9 W
Number of Pins: 6
Rise Time: 3.4 ns
Fall Time: 6.7 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOP
Popularity: Low
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Continuous Drain Current (ID): 13 A
Gate to Source Voltage (Vgs): 20 V

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1100762-TPC8051-H(TE12L,VM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8051-H(TE12L,VM
PD 1900 milliwatts
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