Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8032-H TPC8032-H

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056781-TPC8032-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 2846pF @ 10V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056781-TPC8032-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 2846pF @ 10V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8032-H - 056781-TPC8032-H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8032-H
056781-TPC8032-H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8032-H 056781-TPC8032-H
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056781-TPC8032-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 15A (Ta) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 33nC @ 10V Max Input Capacitance: 2846pF @ 10V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 7.5A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056781-TPC8032-H
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP (5.5x6.0)
Dimension: 8-SOIC (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 15A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 33nC @ 10V
Max Input Capacitance: 2846pF @ 10V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 7.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 056781-TPC8032-H
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8032-H
Polarity N-Channel; N-Channel
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