Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8012-H TPC8012-H

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 213262-TPC8012-H
Packaging: Digi-Reel
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP (5.5x6.0)
Dimension: 8-SOIC (0.173", 4.40mm Width)
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 440pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 400 mOhm @ 900mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

MOSFET N-CH 200V 1.8A 8-SOP Product overview: TPC8012-H from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 1.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPC8012-H can be used for catalog matching and distributor lookup.