Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6113 TPC6113

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056765-TPC6113 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VS-6 (2.9x2.8) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 10nC @ 5V Max Input Capacitance: 690pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 55 mOhm @ 2.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056765-TPC6113 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VS-6 (2.9x2.8) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 10nC @ 5V Max Input Capacitance: 690pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 55 mOhm @ 2.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6113 - 056765-TPC6113 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6113
056765-TPC6113
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6113 056765-TPC6113
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056765-TPC6113 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VS-6 (2.9x2.8) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 10nC @ 5V Max Input Capacitance: 690pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 55 mOhm @ 2.5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056765-TPC6113
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VS-6 (2.9x2.8)
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 200μA
Max Gate Charge: 10nC @ 5V
Max Input Capacitance: 690pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 55 mOhm @ 2.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 056765-TPC6113
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6113
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 700 milliwatts
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