Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6012 TPC6012

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056750-TPC6012 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 700mW (Ta) Family Name: TPC6012 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VS-6 (2.9x2.8) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 9nC @ 5V Max Input Capacitance: 630pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 20 mOhm @ 3A, 4.5V Alternative Parts (Cross-Reference): BSL202SNL6327HTSA1; BSL202SNL6327XT; BSL202SN L6327; BSL202SN; Introduction Date: August 26, 2009 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056750-TPC6012 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 700mW (Ta) Family Name: TPC6012 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VS-6 (2.9x2.8) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 9nC @ 5V Max Input Capacitance: 630pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 20 mOhm @ 3A, 4.5V Alternative Parts (Cross-Reference): BSL202SNL6327HTSA1; BSL202SNL6327XT; BSL202SN L6327; BSL202SN; Introduction Date: August 26, 2009 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6012 - 056750-TPC6012 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6012
056750-TPC6012
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6012 056750-TPC6012
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056750-TPC6012 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 700mW (Ta) Family Name: TPC6012 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VS-6 (2.9x2.8) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 9nC @ 5V Max Input Capacitance: 630pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 20 mOhm @ 3A, 4.5V Alternative Parts (Cross-Reference): BSL202SNL6327HTSA1; BSL202SNL6327XT; BSL202SN L6327; BSL202SN; Introduction Date: August 26, 2009 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2022 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056750-TPC6012
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 700mW (Ta)
Family Name: TPC6012
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VS-6 (2.9x2.8)
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 1.2V @ 200μA
Max Gate Charge: 9nC @ 5V
Max Input Capacitance: 630pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 20 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): BSL202SNL6327HTSA1; BSL202SNL6327XT; BSL202SN L6327; BSL202SN;
Introduction Date: August 26, 2009
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 056750-TPC6012
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6012
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 700 milliwatts
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