The TLP731GB is a photocoupler consisting of a gallium arsenide infrared emitting diode optically coupled to a photo-transistor in a six-lead plastic DIP package, designed for switching applications in office machines and household equipment. It features a minimum collector-emitter voltage of 55V, a current transfer ratio of 100% minimum at IF=5mA and VCE=5V, and an isolation voltage of 4000 Vrms. The device meets UL 1577, cUL, and VDE EN 60747-5-5 (with Option D4) certifications. Creepage and clearance are both 7.0 mm minimum, with insulation thickness of 0.5 mm. Operating temperature ranges from -55°C to 100°C, and storage temperature ranges from -55°C to 125°C. The TLP731GB has no base lead connection for improved EMI immunity. Weight is 0.35 g typical.
Optoisolator Transistor with Base Output 4000Vrms 1 Channel 6-DIP Product overview: TLP731GB from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-TLP731GB can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-TLP731GB |
| Product Name | DIP Bipolar Transistor |
| Package Type | Tube |
