The TLP3906 is a photocoupler in the SO6 package consisting of an infrared LED optically coupled to a series-connected photodiode array, designed for MOSFET gate driver applications. It features a minimum isolation voltage of 3750 Vrms, a minimum open voltage of 7 V, and a minimum short-circuit current of 12 µA. The device complies with UL 1577, cUL, and VDE EN 60747-5-5 safety standards. It operates over a temperature range of -40 to 125 °C, with a creepage and clearance distance of 5.0 mm and an internal isolation thickness of 0.4 mm. The SO6 package measures 11-4M1S and weighs 0.08 g typ.
PHOTOVOLTAIC; 3.75KV BV; SO6; 12 Product overview: TLP3906(E from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.75KV. Search-friendly keywords include transistor, BJT, switching, amplification, 3.75KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-TLP3906(E can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-TLP3906(E |
| Product Name | 3.75KV Bipolar Transistor |
| Package Type | Tray |
