Win Source Part Number: 1187395-TK9A90E,S4X
Category: Discrete Semiconductor Products>Transistors
Series: π-MOSVIII
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 900µA
Power Dissipation (Max): 50W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: TK9A90E,S4X(S,TK9A90
Base Product Number: TK9A90
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 900V 9A (Ta) 50W (Tc) Through Hole TO-220SIS
MOSFET N-CH 900V 9A TO220SIS
| Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1187395-TK9A90E,S4X | TK9A90ES4X-ND | TK9A90E,S4X |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
