Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK8P60W,RVQ

N-Channel 600V 8A (Ta) 80W (Tc) Surface Mount DPAK

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 217585-TK8P60W,RVQ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
FET Feature: Super Junction
Polarity: N-Channel
Power Dissipation (Max): 80W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: DPAK
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 8A (Ta)
Gate-Source Threshold Voltage: 3.7V @ 400μA
Max Gate Charge: 18.5nC @ 10V
Max Input Capacitance: 570pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 500 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

MOSFET N CH 600V 8A DPAK Product overview: TK8P60W,RVQ from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 8A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK8P60W,RVQ can be used for catalog matching and distributor lookup.