Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK8A65W,S5X

N-Channel 650V 7.8A (Ta) 30W (Tc) Through Hole TO-220SIS

MOSFET N-CH 650V 7.8A TO220SIS Product overview: TK8A65W,S5X from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 7.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 7.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK8A65W,S5X can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 796851-TK8A65W,S5X
Series: DTMOSIV
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3 Full Pack, Isolated Tab
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Family Name: TK8A65W
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220SIS
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 3.5V @ 300μA
Gate Charge (Qg) (Maximum) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 570pF @ 300V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 30W (Tc)
Rds On (Maximum) @ Id, Vgs: 650 mOhm @ 3.9A, 10V
Alternative Parts (Cross-Reference): TSM60N600CI C0G; MMF70R600PTH; TSM70N600CI C0G; R6010MNX;
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2030
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited