Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK80A08K3 TK80A08K3

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 367381-TK80A08K3 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 80A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 175nC @ 10V Max Input Capacitance: 8200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.5 mOhm @ 40A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance