Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK7A65W,S5X TK7A65W,S5X

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 796850-TK7A65W,S5X Series: DTMOSIV Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack, Isolated Tab Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Family Name: TK7A65W Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220SIS Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 3.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 490pF @ 300V Vgs (Maximum): ±30V Power Dissipation (Maximum): 30W (Tc) Rds On (Maximum) @ Id, Vgs: 780 mOhm @ 3.4A, 10V Country of Origin: Malaysia Estimated EOL Date: 2030 Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK7A65W,S5X - 796850-TK7A65W,S5X - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - TK7A65WS5X-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TK7A65W,S5X - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 796850-TK7A65W,S5X Series: DTMOSIV Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack, Isolated Tab Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Family Name: TK7A65W Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220SIS Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 3.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 490pF @ 300V Vgs (Maximum): ±30V Power Dissipation (Maximum): 30W (Tc) Rds On (Maximum) @ Id, Vgs: 780 mOhm @ 3.4A, 10V Country of Origin: Malaysia Estimated EOL Date: 2030 Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK7A65W,S5X - 796850-TK7A65W,S5X - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK7A65W,S5X
796850-TK7A65W,S5X
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK7A65W,S5X 796850-TK7A65W,S5X
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 796850-TK7A65W,S5X Series: DTMOSIV Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack, Isolated Tab Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Family Name: TK7A65W Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-220SIS Channel Type Type: N Drain Source Voltage: 650V Vgs(th) (Maximum) @ Id: 3.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 490pF @ 300V Vgs (Maximum): ±30V Power Dissipation (Maximum): 30W (Tc) Rds On (Maximum) @ Id, Vgs: 780 mOhm @ 3.4A, 10V Country of Origin: Malaysia Estimated EOL Date: 2030 Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 796850-TK7A65W,S5X
Series: DTMOSIV
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3 Full Pack, Isolated Tab
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Family Name: TK7A65W
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-220SIS
Channel Type Type: N
Drain Source Voltage: 650V
Vgs(th) (Maximum) @ Id: 3.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 15nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 490pF @ 300V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 30W (Tc)
Rds On (Maximum) @ Id, Vgs: 780 mOhm @ 3.4A, 10V
Country of Origin: Malaysia
Estimated EOL Date: 2030
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - TK7A65WS5X-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TK7A65WS5X-ND
Single FETs, MOSFETs TK7A65WS5X-ND
N-Channel 650V 6.8A (Ta) 30W (Tc) Through Hole TO-220SIS

N-Channel 650V 6.8A (Ta) 30W (Tc) Through Hole TO-220SIS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TK7A65W,S5X - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TK7A65W,S5X
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TK7A65W,S5X
MOSFET N-CH 650V 6.8A TO220SIS

MOSFET N-CH 650V 6.8A TO220SIS

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Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 796850-TK7A65W,S5X TK7A65WS5X-ND TK7A65W,S5X
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK7A65W,S5X Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 30000 milliwatts
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