Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK72E12N1 TK72E12N1

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212922-TK72E12N1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 255W (Tc)
Family Name: TK72E12N1
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 120V
Continuous Drain Current at 25°C: 72A (Ta)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Gate Charge: 130nC @ 10V
Max Input Capacitance: 8100pF @ 60V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.4 mOhm @ 36A, 10V
Alternative Parts (Cross-Reference): IPP048N12N3 G; IPP048N12N3GXKSA1; STP200N12F7; IPP041N12N3GXK;
Introduction Date: August 09, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2030
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Trans MOSFET N-CH Si 120V 179A 3-Pin(3+Tab) TO-220 Magazine / MOSFET N CH 120V 72A TO-220 Product overview: TK72E12N1 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 120V, 179A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 120V, 179A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK72E12N1 can be used for catalog matching and distributor lookup.