Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK70A06J1(Q) TK70A06J1(Q)

Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1019259-TK70A06J1(Q) Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 60 V Input Capacitance: 5.45 nF Power Dissipation: 45 W Rise Time: 24 ns Fall Time: 106 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: TO-220-3 Popularity: Low Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Max Power Dissipation: 45 W Continuous Drain Current (ID): 70 A Drain to Source Breakdown Voltage: 60 V Turn-Off Delay Time: 21 ns Drain to Source Resistance: 6.4 mΩ Gate to Source Voltage (Vgs): 20 V Rds On Max: 6.4 mΩ