Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK6A80E TK6A80E

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212917-TK6A80E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 6A (Ta)
Gate-Source Threshold Voltage: 4V @ 600μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 1350pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 800V TO220SIS Product overview: TK6A80E from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK6A80E can be used for catalog matching and distributor lookup.