Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK6A80E TK6A80E

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212917-TK6A80E Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack, Isolated Tab Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 4V @ 600μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 1350pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.7 Ohm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Sufficient