Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK6A80E,S4X

N-Channel 800V 6A (Ta) 45W (Tc) Through Hole TO-220SIS

Win Source Part Number: 1113953-TK6A80E,S4X
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: π-MOSVIII
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 600µA
Power Dissipation (Max): 45W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220SIS
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: TK6A80ES4X,TK6A80E,S4X(S
Base Product Number: TK6A80
Drive Voltage (Max Rds On, Min Rds On): 10V